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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT Module 4MBI75T-060 MS5F 5432
Fuji Electric Co.,Ltd. Matsumoto Factory
Apr. 23 '03 S.Ogawa Apr. 23 '03 T.Miyasaka Apr. - 23 - '03 K.Yamada
T.Fujihira
MS5F 5432
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H04-004-07
a b c
Revised Records
Date Classification Ind. Content Applied date Issued date Drawn Checked
T.Miyasaka K.Yamada
Approved
Apr. - 23- '03
enactment
T.Fujihira
Oct. - 16- '03
Revision
a
Added thermistor (P3/14, 4/14, 12/14)
Y.Kobayashi
T.Miyasaka K.Yamada
Y.Seki
Dec. - 10- '03
Revision
b
Revised VCE(sat),VF (P4/14, 10/14, 12/14)
Y.Kobayashi
S.Miyashita K.Yamada
Y.Seki
Sep. - 07- '04
Revision
c
Revised VF (P4/14, 12/14)
Y.Kobayashi
S.Miyashita K.Yamada
Y.Seki
MS5F 5432
2 14
H04-004-06
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4MBI75T-060
1. Outline Drawing ( Unit : mm )
(
a
) shows reference dimension.
2. Equivalent circuit [Inverter] [Thermistor]
8
9
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3.
Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Ic pulse IF IF pulse Pc Tj Tstg Duty=100 % 1ms Duty=50 % 1ms 1 device Conditions Ic=1mA Maximum Ratings 600 20 75 150 75 150 178 150 -40~ +125 2500 3.5 Units V V A
Collector Power Dissipation Junction temperature Storage temperature
a
W C C V Nm
Isolation between terminal and copper base *1 Viso AC : 1min. voltage between thermistor and others *2 Screw Mounting *3 Torque (*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : Mounting 2.5~3.5 N m (M5) 4. Electrical characteristics ( at Tj= 25Cunless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Characteristics Symbols ICES IGES VGE VCE Conditions 0 V, VCE = 600 V 0 V, VGE = 20 V 20 V, Ic = 15 75 0 10 V A V V 75 mA Chip Terminal min. 6.2 Chip Terminal IF = 75 A Ic > 150A ,Tj = 125C T = 25C T =100C T = 25/50C 30 465 3305
c c b b
typ. 6.7 2.0 2.3 5500 1000 850 0.4 0.25 0.1 0.4 0.04 2.1 2.4 5000 495 3375
Max. Units 1.0 200 7.7
b b
mA nA V V
VGE(th) VCE
VCE(sat)
VGE Ic =
VGE =
Cies Coes Cres ton tr tr(i) toff tf VF trr PAV
VCE
2.3 2.6 1.2 0.6 1.2 0.45
pF
Inverter
Reverse transfer capacitance Turn-on time
f= 1 MHz Vcc = 300 V Ic = 75 A VGE 15 V RG = 51 IF = 75 A
s
Turn-off time Forward on voltage Reverse recovery time Allowabe avalanche energy during short circuit cutting off (Non-repetitive)
Thermistor
c c
2.5 2.8 0.3 -
V s mJ
a
Resistance B value
R B
520 3450
K
5. Thermal resistance characteristics Items Thermal resistance (1 device) Contact Thermal resistance (1 device) Symbols Rth(j-c) Conditions Characteristics min. typ. 0.05 Max. Units
IGBT FWD Rth(c-f) With thermal compound *
0.70 1.66 C/W -
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
a b c
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6. Indication on module
4MBI75 T -060
75A 600V
Lot No.
P lace of m anufuc turing
7. Applicable category This specification is applied to IGBT Module named 4MBI75T-060
8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when tranporting.
9. Definitions of switching time

90%
0V
L
0V V GE trr Irr
90%

VCE
Vcc
Ic
90%
RG VGE
VCE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
MS5F 5432
5
14
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10. Definition of the allowable avalance energy during short circuit cutting off
-VCEP 1 2
PAV= IC -ICP
xVCEPxICPxtf(SC)
VCE
tf(SC)
11. UL recognition This products is recognized by Underwriters Laboratories Inc., the file No. is E82988.
12. Packing and Labeling
Packing box
Display on the packing box - Logo of production - Type name - Lot No. - Products quantity in a packing box
Display * Each modules are packed with electrical protection.
MS5F 5432
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14
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13. Reliability test results
Reliability Test Items
Test categories Test items Test methods and conditions : : : : 20N 101 sec. 2.5 ~ 3.5 Nm (M5) 101 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (1:0) (1:0)
(Aug.-2001 edition)
1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
4
5
6
1 2 3
4
Environment Tests
5
Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Shock Maximum acceleration 5000m/s2 : Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Solderabitlity Solder temp. : 2355 Immersion time : 50.5sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. Resistance to Solder temp. : 2605 Soldering Heat Immersion time : 101sec. Test time : 1 time Each terminal should be Immersed in solder within 1~1.5mm from the body. High Temperature Storage temp. : 1255 Storage Test duration : 1000hr. Low Temperature Storage temp. : -405 Storage Test duration : 1000hr. Temperature Storage temp. : 852 Humidity Relative humidity : 855% Storage Test duration : 1000hr. Unsaturated Test temp. : 1202 Pressure Cooker Atmospheric pressure: 1.7 x 105 Pa Test humidity : 855% Test duration : 96hr. Temperature Cycle Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
5
(1:0)
Mechanical Tests
Test Method 404 Condition code B
5
(1:0)
Test Method 303 Condition code A
5
(1:0)
Test Method 302 Condition code A
5
(1:0)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E
5 5 5
(1:0) (1:0) (1:0)
5
(1:0)
Test Method 105
5
(1:0)
Dwell time Number of cycles 6 Thermal Shock Test temp.
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
+5 -0
Test Method 307 method Condition code A
5
(1:0)
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Reliability Test Items
Test categories Test items 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test methods and conditions Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 (1:0)
(Aug.-2001 edition)
Test Method 101
Endurance Tests Tests Endurance
Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
: Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
5
(1:0)
: Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles
Test Method 102 Condition code C
5
(1:0)
4 Intermitted Operating Life (Power cycle) ( for IGBT )
Test Method 106
5
(1:0)
Failure Criteria
Item Electrical characteristic Characteristic Leakage current Gate threshold voltage Saturation voltage Forward voltage Thermal IGBT resistance FWD Isolation voltage Visual inspection Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
a b c
Symbol ICES IGES VGE(th) VCE(sat) VF VGE or VCE VF Viso -
Failure criteria Lower limit Upper limit LSLx0.8 USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 USLx1.2
Unit mA A mA V V mV mV -
Note
Broken insulation The visual sample
MS5F 5432
8
14
H04-004-03
Reliability Test Results
Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample
Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 303 Condition code A Test Method 302 Condition code A Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A
Test items
Mechanical Tests
1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage
5 5 5 5 5 5 5 5 5 5 5 5
0 0 0 0 0 0 0 0 0 0 0 0
Environment Tests
3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 Thermal Shock
Endurance Tests Endurance Tests
1 High temperature Reverse Bias Test Method 101 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT )
Test Method 101 Test Method 102 Condition code C Test Method 106
5 5 5 5
0 0 0 0
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a b c
b
200
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.)
b
200
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.)
VGE= 20V 15V 12V
150 150
VGE= 20V 15V 12V 10V
Collector current : Ic [ A ]
10V
100
Collector current : Ic [ A ]
100
50
50
8V 8V
0 0 1 2 3 4 5 0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
b
200
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
12
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.)
10 150
Collector current : Ic [ A ]
Tj= 125C
Collector - Emitter voltage : VCE [ V ]
Tj= 25C
8
100
6
4
50
Ic=150A
2
Ic=75A Ic=37.5A
0 0 1 2 3 4 5
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
20000
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
500
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
5000
300
15
200
10
1000
100
5
Coes Cres
200 0 5 10 15 20 25 30 35
0 0 100 200 300
0 400
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
Collector - Emitter voltage : VCE [ V ]
400
20
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a b c
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=51ohm, Tj= 25C
1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg= 51ohm, Tj= 125C
ton
ton
Switching time : ton, tr, toff, tf [ nsec ]
toff tr
100
Switching time : ton, tr, toff, tf [ nsec ]
toff tr
100
tf
tf
10 0 50 100 150
10 0 50 100 150
Collector current : Ic [ A ]
Collector current : Ic [ A ]
5000
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=+-15V, Tj= 25C
8
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=51ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
ton toff tr
6
Eon(125C)
Eon(25C)
4
Eoff(125C) Eoff(25C)
2
100
tf
Err(125C) Err(25C)
10 10 100 200
0 0 50 100 150
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
20
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=+-15V, Tj= 125C
200
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=51ohm, Tj<=125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
15 150
10
Collector current : Ic [ A ]
500
100
5
Eoff
50
Err
0 50 100 0 0 200 400 600 800
Gate resistance : Rg [ ohm ]
Collector - Emitter voltage : VCE [ V ]
MS5F 5432
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a b c
c
150
[ Inverter ] Forward current vs. Forward on voltage (typ.)
300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=51ohm
Tj=125C
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
trr(125C)
100
Forward current : IF [ A ]
100
Tj=25C
trr(25C) Irr(125C)
50
Irr(25C)
0 0 1 2 3 4
10 0 50 100 150
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
3
a
100
FWD
[ Th e r mi s t or ]
Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
1
IGBT
Resistance : R [ k ]
0.01 0.1 1
10
0.1
1
0.02 0.001
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Pulse width : Pw [ sec ]
T emperat ure [C ]
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Warnings
This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. Use this product within the power cycle curve (Technical Rep.No. : MT6M3947) (No.: MT6M3947) Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown and this may lead to a critical accident. 100mm 100um 10um It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOA RBSOA If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE -VGE : -VGE = -15V) In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG
-
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Cautions
Fuji Electric is constantly making every endeavor to improve the product quality and reliability.However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine ralaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
MS5F 5432
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